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Switching Diode, I fwd. 300 mA, Vrev 75 V, 0.5 Watt, Recovery Time 4.0 nS, DO-35 Package.
Switching Diode, I fwd. 300 mA, Vrev 75 V, 0.5 Watt, Recovery Time 4.0 nS, DO-35 Package.

Switching Diode, I fwd. 300 mA, Vrev 75 V, 0.5 Watt, Recovery Time 4.0 nS, DO-35 Package.

  • $ 99.00
  • Brand: SYSCOM
  • Availability: 9 In stock
  • SKU: 1N4148

Main Features Forward current (IF) of 300 mA Peak reverse voltage (VRRM) of 75 V Power dissipation (PD) of 0.5 W Reverse recovery time (trr) of 4.0 ns DO-35 (DO-204AH)...

Tags: categoria:Radiocomunicación , marca:SYSCOM

Main Features

  • Forward current (IF) of 300 mA
  • Peak reverse voltage (VRRM) of 75 V
  • Power dissipation (PD) of 0.5 W
  • Reverse recovery time (trr) of 4.0 ns
  • DO-35 (DO-204AH) package type
Electrical Specifications
  • Maximum forward current: 300 mA
  • Reverse current: 5.0 μA (VR=75V)
  • Breakdown voltage: 75 V (IR=5.0 μA)
  • Forward voltage: 1.0 V (IF=10 mA)
  • Total capacitance: 4.0 pF (VR=0, f=1.0 MHz)
Mechanical Specifications
  • Package type: DO-35 (DO-204AH)
  • Weight: 0.137 grams
  • Dimensions: 4.56 x 1.91 mm (diameter x length)
  • Material: Hermetic glass
  • Marking: Black band on cathode
Thermal Specifications
  • Storage temperature: -65°C to +200°C
  • Operating temperature: -55°C to +175°C
  • Thermal resistance: 300°C/W

Typical Applications

  • High-speed switching circuits
  • Rectification in power supplies
  • Reverse polarity protection
  • Signal detection circuits
  • Switching in digital circuits
Limit Conditions
  • Non-repetitive peak current: 4.0 A (1.0 μs)
  • Average rectified current: 200 mA
  • Junction temperature: -55°C to +175°C
Storage Information
  • Storage temperature: -65°C to +200°C
  • Humidity: 85% RH at 85°C (humidity test)

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