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NPN Bipolar Transistor SD1275-01, 160 MHz, 13.6 VDC, 40 Watt.
NPN Bipolar Transistor SD1275-01, 160 MHz, 13.6 VDC, 40 Watt.

NPN Bipolar Transistor SD1275-01, 160 MHz, 13.6 VDC, 40 Watt.

  • $ 2,699.00
  • Brand: TPL COMMUNICATIONS
  • Availability: 2 In stock
  • SKU: B2-223

Key Features 160 MHz high-frequency NPN bipolar transistor 40 Watt output power Stable 13.6 VDC operation Compact and thermally efficient design Reliable performance in advanced RF applications Basic Specifications Type:...

Tags: categoria:Radiocomunicación , marca:TPL COMMUNICATIONS , proveedor:Syscom , sku:B2-223 , supplier:Syscom , syscom , Tecnología Y Electrónica

Key Features

  • 160 MHz high-frequency NPN bipolar transistor
  • 40 Watt output power
  • Stable 13.6 VDC operation
  • Compact and thermally efficient design
  • Reliable performance in advanced RF applications

Basic Specifications

  • Type: NPN bipolar transistor
  • Frequency: 160 MHz
  • Supply voltage: 13.6 VDC
  • Configuration: Common emitter
  • Application: VHF communications
Maximum Ratings
  • VCBO: 36 V
  • VCEO: 16 V
  • VCES: 36 V
  • VEBO: 4.0 V
  • IC: 8.0 A
  • PDISS: 70 W
  • TJ: +200 °C
  • TSTG: -65 to +150 °C
Dynamic Specifications
  • POUT: 40 W (f=160 MHz, PIN=5.0 W, VCE=13.6 V)
  • GP: 9 dB (f=160 MHz, PIN=5.0 W, VCE=13.6 V)
  • COB: 95 pF (f=1 MHz, VCB=15 V)
Static Specifications
  • BVCES: 36 V (IC=15 mA, VBE=0 mA)
  • BVCEO: 16 V (IC=50 mA, IB=0 mA)
  • BVEBO: 4.0 V (IE=5 mA, IC=0 mA)
  • ICBO: 5 mA (VCB=15 V, IE=0 mA)
  • hFE: 20 (VCE=5 V, IC=250 mA)
Thermal Data
  • RTH(j-c): 1.2 °C/W

Impedance Data

  • ZIN (Ω): 1.0 + j 0.4 (160 MHz)
  • ZCL (Ω): 2.3 + j 0.1 (160 MHz)

Note: PIN = 3.0 W; VCE = 12.5 V

Connections

  • 1: Collector
  • 2: Emitter
  • 3: Base
  • 4: Emitter

Mechanical Dimensions (M113)

  • A: 5.59-5.84 mm (0.220-0.230')
  • B: 19.94 mm (0.785')
  • C: 18.29-18.54 mm (0.720-0.730')
  • D: 24.64-24.89 mm (0.970-0.980')
  • E: 9.78 mm (0.385')

Mechanical Dimensions (M113) Cont.

  • F: 0.10-0.15 mm (0.004-0.006')
  • G: 2.16-2.67 mm (0.085-0.105')
  • H: 4.06-4.57 mm (0.160-0.180')
  • I: 7.11 mm (0.280')
  • J: 6.10-6.48 mm (0.240-0.255')

Typical Performance

  • Designed with ballasted emitter geometry to withstand extreme load mismatch conditions
  • Electrical characteristics specified at 25°C
  • Plastic epoxy encapsulated package
  • Operating frequency: up to 160 MHz
  • Collector-emitter voltage: 16 V (max.)

Applications

  • VHF communication systems
  • RF power amplifiers
  • Mobile radio equipment
  • High-frequency transmitters
  • High-reliability communication systems

Ordering Information

  • Ordering code: SD1275-01
  • Marking: SD1275-1
  • Package: M113
  • Packaging: Plastic trays

Additional Data

  • Revision: 2
  • Revision date: May 2004
  • Transistor type: Epitaxial silicon
  • Operation class: Class C

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