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RF Power NPN Transistor, 30 MHz Silicon, 13.6 VDC, 4.0 Amp, 10 Watt, TO-220AB.
RF Power NPN Transistor, 30 MHz Silicon, 13.6 VDC, 4.0 Amp, 10 Watt, TO-220AB.

RF Power NPN Transistor, 30 MHz Silicon, 13.6 VDC, 4.0 Amp, 10 Watt, TO-220AB.

  • $ 699.00
  • Brand: SYSCOM
  • Availability: Out of stock
  • SKU: MRF475

Key Features Silicon RF power NPN transistor Operating frequency up to 30 MHz 13.6 VDC collector-emitter voltage 4.0 Ampere current capacity Maximum output power of 10 Watts Maximum Ratings IC:...

Tags: categoria:Radiocomunicación , marca:SYSCOM

Key Features

  • Silicon RF power NPN transistor
  • Operating frequency up to 30 MHz
  • 13.6 VDC collector-emitter voltage
  • 4.0 Ampere current capacity
  • Maximum output power of 10 Watts
Maximum Ratings
  • IC: 4.0 A
  • VCE: 18 V
  • VCB: 48 V
  • PD: 10 W @ TC = 25 °C
  • TSTG: -65 °C to +150 °C
  • TJ: -65 °C to +150 °C
  • θJ-C: 12.5 °C/W
Electrical Characteristics
  • BVCEO: 18 V @ IC = 20 mA
  • BVCES: 48 V @ IC = 50 mA
  • BVEBO: 4.0 V @ IE = 5.0 mA
  • ICBO: 1.0 mA @ VCB = 25 V
  • hFE: 30-60 @ VCE = 5.0 V, IC = 500 mA
  • Cob: 125-145 pF @ VCB = 13.6 V, f = 1.0 MHz
  • GP: 10-12 dB
  • η: 40% @ Pout = 12 W (PEP), VCC = 13.6 V, f = 2.0 MHz, ICQ = 300 mA
  • IMD: -30 dB
Physical Configuration
  • Package: TO-220AB (Common Emitter)
  • Connections: 1 = BASE, 2 = COLLECTOR, 3 = EMITTER TAB = COLLECTOR

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