RF Power NPN Transistor, Silicon at 470 MHz, 6.2 dB, 25 Watt, 316-01.

Key Features

• RF power NPN transistor
• Operating frequency: 470 MHz
• Gain: 6.2 dB
• Output power: 25 Watt
• Advanced silicon technology

Maximum Ratings

• Collector-Emitter Voltage (VCEO): 16 Vdc
• Collector-Base Voltage (VCBO): 36 Vdc
• Emitter-Base Voltage (VEBO): 4.0 Vdc
• Collector Current (IC): 4.0 Adc
• Total Dissipation (TC = 25°C): 103 Watts
• Derating: 0.59 W/°C above 25°C
• Storage Temperature Range: -65 to +150 °C

Thermal Characteristics

• Thermal Resistance (Junction to Case): 1.7 °C/W

Electrical Characteristics (TC = 25°C)

OFF Characteristics

• Collector-Emitter Breakdown Voltage: 16 Vdc (IC = 20 mAdc, IB = 0)
• Collector-Base Breakdown Voltage: 36 Vdc (IC = 20 mAdc, VBE = 0)
• Emitter-Base Breakdown Voltage: 4.0 Vdc (IE = 5.0 mAdc, IC = 0)
• Collector Leakage Current: ≤5.0 mAdc (VCE = 15 Vdc, VBE = 0)

ON Characteristics

• DC Current Gain (hFE): 40-100 (IC = 4.0 Adc, VCE = 5.0 Vdc)

Dynamic Characteristics

• Output Capacitance (Cob): 60-85 pF (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)

Functional Tests

• Common Emitter Amplifier: Power gain 6.2-7.0 dB
• Supply Voltage: 12.5 Vdc
• Input Power: 5.0-6.0 Watts
• Collector Efficiency: 55-60%
• Input Impedance: 1.2 + j3.3 Ohms
• Output Impedance: 1.9 + j2.1 Ohms

Diagrams and Graphs

• Output Power vs Input Power
• Output Power vs Frequency
• Output Power vs Supply Voltage
• Power Saturation Profile
• Series Equivalent Input/Output Impedance

Package Dimensions

Code: CASE 316-01, STYLE 1

• Dimensions: 24.38-25.14 mm (A) x 12.45-12.95 mm (B) x 5.97-7.62 mm (C)
• Connections: 1.Emitter, 2.Collector, 3.Emitter, 4.Base

Applications

• UHF large signal amplifiers at 12.5 Volt
• Industrial and commercial FM equipment
• Operation up to 512 MHz
• Systems with controlled impedance requirements