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MOSFET Power Transistor for 175 / 530 MHz, 70 Watt.
MOSFET Power Transistor for 175 / 530 MHz, 70 Watt.

MOSFET Power Transistor for 175 / 530 MHz, 70 Watt.

  • $ 1,799.00
  • Brand: SYSCOM PARTS
  • Availability: In stock
  • SKU: RD70HUF2

Key Features Output power up to 84W typical Drain efficiency of 74% at 175 MHz Tape and reel packaging: 500 units per reel Integrated gate protection diode Designed for high-power...

Tags: categoria:Radiocomunicación , marca:SYSCOM PARTS , proveedor:Syscom , sku:RD70HUF2 , supplier:Syscom , syscom , Tecnología Y Electrónica

Key Features

  • Output power up to 84W typical
  • Drain efficiency of 74% at 175 MHz
  • Tape and reel packaging: 500 units per reel
  • Integrated gate protection diode
  • Designed for high-power VHF/UHF amplifiers

Electrical Specifications

  • Drain-source voltage: 40V (max)
  • Gate-source voltage: -5/+10V
  • Channel dissipation: 300W
  • Drain current: 20A (max)
  • Channel temperature: 175°C
  • Thermal resistance: 0.5°C/W

RF Performance

  • Output power: 84W typical at 175MHz
  • Efficiency: 74% typical at 175MHz
  • Input power: 4.0W at 175MHz
  • Output power: 75W typical at 530MHz
  • Efficiency: 64% typical at 530MHz
  • Input power: 5.5W at 530MHz
Operating Frequency
  • VHF range: 135-175 MHz
  • UHF range: 450-530 MHz
  • Typical frequencies: 135, 155, 175, 450, 490, 530 MHz
Test Conditions
  • Test voltage: 12.5V
  • Bias current: 1.0A total / 0.5A per side
  • Impedance: 50Ω
  • VSWR ratio: 20:1
Compliance
  • RoHS compliant
  • Lead in high-temperature solders (over 85%)
  • Applicable exemption: High-temperature solders
Applications
  • Output stage for high-power amplifiers
  • VHF/UHF mobile radio systems
  • Broadband communication equipment
Environmental Conditions
  • Operating temperature: -40°C to 175°C
  • Storage temperature: -40°C to 175°C
  • Test temperature: 25°C (unless otherwise noted)
Typical Electrical Characteristics
  • Zero gate voltage drain current: 150μA
  • Gate-source leakage current: 2.5μA
  • Gate threshold voltage: 1.6V (min) - 2.4V (max)
Circuit Configuration
  • Molded package
  • Multiple electrode connection
  • Design for VHF evaluation (135-175MHz)
Package Composition
  • Material: Silicon
  • Encapsulation: Mold package
  • Pin configuration
  • Complies with RoHS standards
Pin Configuration
  • 1. Source (common)
  • 2. Drain
  • 3. Drain
  • 4. Source (common)
  • 5. Source (common)
  • 6. Gate
  • 7. Gate
  • 8. Source (common)
  • 9. Source (common)
Design Features
  • Designed for high efficiency
  • Optimized for VHF/UHF
  • Multiple electrode connection
  • Low ESR construction

Evaluation and Testing

  • Evaluation on VHF test board
  • Characteristic impedance: 50Ω
  • Substrate material: Glass epoxy
  • Dielectric constant: 4.8 @1GHz
  • Loss tangent: 0.018 @1GHz
  • Documentation: AN-VHF-049

Associated Components

  • High-Q ceramic capacitors
  • Precision coils
  • SMD chip resistors
  • 220μF electrolytic capacitors

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