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Power Transistor for PA61AC RSF (MRF1570N).
Power Transistor for PA61AC RSF (MRF1570N).

Power Transistor for PA61AC RSF (MRF1570N).

  • $ 1,499.00
  • Brand: TPL COMMUNICATIONS
  • Availability: 4 In stock
  • SKU: B2114

Key Features Operating frequency: Up to 470 MHz Output power: 70 Watts Supply voltage: 12.5 Vdc Gain: 11.5 dB Efficiency: 60% Technology: Lateral N-channel MOSFET Capable of handling 20:1 VSWR...

Tags: categoria:Radiocomunicación , marca:TPL COMMUNICATIONS , proveedor:Syscom , sku:B2114 , supplier:Syscom , syscom , Tecnología Y Electrónica

Key Features

  • Operating frequency: Up to 470 MHz
  • Output power: 70 Watts
  • Supply voltage: 12.5 Vdc
  • Gain: 11.5 dB
  • Efficiency: 60%
  • Technology: Lateral N-channel MOSFET
  • Capable of handling 20:1 VSWR
  • Plastic package capable of 200°C
  • RoHS compliant (N suffix for lead-free terminals)

Applications

  • Mobile FM communication equipment
  • RF signal amplifiers
  • Industrial and commercial equipment
  • Radio frequency systems

Design Features

  • Excellent thermal stability
  • Equivalent series impedance parameters
  • Demonstration amplifier information available
  • TO-272-8 plastic package
  • Available in tape and reel format (500 units per 44 mm reel)
Maximum Ratings
  • D-S Voltage: +0.5 to +40 Vdc
  • G-S Voltage: ±20 Vdc
  • Dissipation: 165 W @ 25°C
  • Derating: 0.5 W/°C above 25°C
  • Storage Temp.: -65 to +150 °C
  • Junction Temp.: 200 °C
Thermal Characteristics
  • RθJC: 0.29 °C/W
ESD Protection
  • Human Body Model: Class 1 (Minimum)
  • Machine Model: M2 (Minimum)
  • Charged Device Model: C2 (Minimum)
Moisture Sensitivity
  • Standard: JESD22-A113, IPC/JEDEC J-STD-020
  • Level: 3
  • Peak temperature: 260 °C
OFF Characteristics
  • IDSS: Max 1 μA (VDS = 60 Vdc, VGS = 0 Vdc)
ON Characteristics
  • VGS(th): 1 to 3 Vdc (VDS = 12.5 Vdc, ID = 0.8 mAdc)
  • VDS(on): Max 1 Vdc (VGS = 10 Vdc, ID = 2.0 Adc)
Dynamic Characteristics
  • Ciss: Max 500 pF
  • Coss: Max 250 pF
  • Crss: Max 35 pF
RF Characteristics
  • Gain: 11.5 dB
  • Efficiency: 60%

Operating Frequencies

  • 135-175 MHz
  • 400-470 MHz

  • Amplifier Configuration

    • Common source amplifier
    • Gate and drain bias
    • Input/output microstrip networks
    • RF passive components

Test Conditions

  • VDD = 12.5 Vdc
  • IDQ = 800 mA
  • Test frequency: 470 MHz
  • Pout = 70 W
  • Pin = 36-38 dBm

Test Components

  • 100 mil chip capacitors
  • 1 to 2 turn inductors
  • Chip resistors (1206)
  • Ferrite beads
  • Microstrip of different dimensions
  • Electrolytic capacitors

Environmental Conditions

  • Test temperature: 25°C
  • Storage temperature: -65 to +150 °C
  • Operating temperature: Up to 200 °C

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